نمایش بزرگتر
IRF7341
کد کالا: 9672
اوریجینال
دسته‌بندی: آرایه ترانزیستورهای MOSFET و FET
موجودی: این محصول در انبار موجود نیست
آی سی IRF7341 یک ماسفت قدرت نوع HEXFET دوبل N-Channel با تحمل توان 2 وات و لتاژ 55 ولت و جریان 3.8 آمپرو مقاومت 0.05 اهم نوع smd می باشد.
مستندات فنی و دیتاشیت
ویژگی های: IRF7341
مشخصات کلی
نوع نصب :
SMD
Package :
SOIC-8
مشخصات اصلی ترانزیستور
نوع ترانزیستور :
N-Channel
حداکثر Vds (ولت) :
55
حداکثر Vgs به (ولت) :
20
حداکثر Id (آمپر) :
3.8
حداکثر توان مصرفی ( وات ) :
2
حداکثر (Vgs(th به ( ولت ) :
20
rdsON به (اهم) :
0.05
حداکثر (td(ON به ( نانو ثانیه ) :
12
حداکثر (td(OFF به ( نانو ثانیه ) :
48
حداکثر زمان خیز Tr به ( نانو ثانیه ) :
4.8
حداکثر زمان فرود Tf به ( نانو ثانیه ) :
20
اطلاعات بیشتر
آی سی IRF7341 یک ترانزیستور ماسفت قدرت نوع HEXFET دوبل N-Channel با تحمل توان 2 وات و لتاژ 55 ولت و جریان 3.8 آمپرو مقاومت 0.05 اهم نوع smd می باشد.
Description:
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically
reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Features:
-Generation V Technology
-Ultra Low On-Resistance
-Dual N-Channel Mosfet
-Surface Mount
-Available in Tape & Reel
-Dynamic dv/dt Rating
-Fast Switching
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically
reduced board space.
The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
Features:
-Generation V Technology
-Ultra Low On-Resistance
-Dual N-Channel Mosfet
-Surface Mount
-Available in Tape & Reel
-Dynamic dv/dt Rating
-Fast Switching
برد مبدل SOIC8
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