The HYB 514100BJ is the new generation dynamic RAM organized as 4 194 304 words by 1-bit. The HYB 514100BJ utilizes CMOS silicon gate process as well as advances circuit techniques to provide wide operation margins, both internally and for the system user. Multiplexed address inputs permit the HYB 514100BJ to be packed in a standard plastic P-SOJ-26/20 package. This package size provides high system bit densities and is compatible with commonly used automatic testing and insertion equipment. System oriented features include single + 5 V (± 10 %) power supply, direct interfacing with high performance logic device families such as Schottky TTL.
