The is a varactor diode of hyper abrupt junction structure fabricated with ion implantation technology. It is intended for use in AFC, CB PLL VCO cicuitry. High Q High capacitance ratio

Specifications

Parameter Reverse Voltage Junction Temperature Storage Temperature Symbol VR Tj Tstg Conditions Ratings to +100 Unit V

Parameter Breakdown Voltage Reverse Current Interterminal Capacitance Ratio Series Resistance Symbol V(BR)R f=50MHz, VR=1V Conditions Ratings min typ max Unit nA pF