The 1N914B is a high-speed, general-purpose silicon small-signal switching diode. axial through-hole DO-35 (DO-204AH) glass package and features improved forward conductance over the base 1N914. Key Specifications • Technology. Silicon PN junction fast-switching diode. • Package. DO-35 (DO-204AH) axial leaded glass case (surface-mount MiniMELF / SOD-80 equivalents are designated as LL914B or FDLL914B). • Repetitive Peak Reverse Voltage (\(V_{RRM}\)). 100 V maximum. • Continuous Reverse Voltage (\(V_{R}\)). 75 V maximum. • Average Rectified Forward Current (\(I_{O}\)). 200 mA maximum. • Continuous DC Forward Current (\(I_{F}\)). 300 mA maximum. • Forward Surge Current (\(I_{FSM}\)). 1 A (for 1 s) and 4 A (for 1 µs). • Forward Voltage Drop (\(V_{F}\)). 0.72 V maximum at \(I_F = 5\text{ mA}\), and 1.0 V maximum at \(I_F = 100\text{ mA}\). • Reverse Recovery Time (\(t_{rr}\)). 4 ns maximum. • Diode Capacitance (\(C_{d}\)). 4 pF maximum at \(V_R = 0\text{ V}\). • Reverse Leakage Current (\(I_{R}\)). 25 nA maximum at \(V_R = 20\text{ V}\), and 5 µA maximum at \(V_R = 75\text{ V}\).