FET جنس Gallium-Arsenide پکیج SMD
ماکسیمم فرکانس کاری 60GHz
کمترین نویز در فرکانس 10GHz
توان 10 دسی بل
| Surface Mount Gallium Arsenide FET for O scillators Technical Data ATF-13786 G AIN (dB) 137 Features • Low Cost Sur face Mount Plastic Package • High fMA X: 60 GHz Typical • Low Phase Noise a t 10 GHz: -110 dBc/Hz @ 100 kHz Typical • Output Power at 10 GHz: up to 10 d Bm • Tape-and-Reel Packaging Option A vailable 25 20 MSG 15 S 21 10 5 MAG MSG 0 1 5 10 20 FREQUENCY (GHz) Inser tion Power Gain, Maximum Available Gain , and Maximum Stable Gain vs. Frequency . VDS = 3 V, IDS = 40 mA. Description Hewlett-Packard’s ATF-13786 is a low cost Gallium Arsenide Schottky barrier- gate field effect transist . |