Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 200 W

Maximum Collector-Base Voltage |Vcb|: 28 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 17 A

>Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 220 MHz

Collector Capacitance (Cc): 330 pF

Forward Current Transfer Ratio (hFE), MIN: 2.2