Manufacturer: STMicroelectronics 
Product Category: MOSFET 
Technology: Si 
Mounting Style: Through Hole 
Package / Case: TO-220-3 
Transistor Polarity: N-Channel 
Number of Channels: 1 Channel 
Vds - Drain-Source Breakdown Voltage: 800 V 
Id - Continuous Drain Current: 3.8 A 
Rds On - Drain-Source Resistance: 2.5 Ohms 
Vgs - Gate-Source Voltage: - 20 V, + 20 V 
Minimum Operating Temperature: - 65 C 
Maximum Operating Temperature: + 150 C 
Pd - Power Dissipation: 100 W 
Channel Mode: Enhancement 
Brand: STMicroelectronics 
Configuration: Single 
Fall Time: 140 ns 
Forward Transconductance - Min: 1 S 
Height: 9.15 mm 
Length: 10.4 mm 
Product Type: MOSFET 
Rise Time: 150 ns 
Series: BUZ80A
Factory Pack Quantity: 50 
Subcategory: MOSFETs
BUZ80AFI
585,200 ریال
High voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology.