Manufacturer: STMicroelectronics
Product Category: MOSFET
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 3.8 A
Rds On - Drain-Source Resistance: 2.5 Ohms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 100 W
Channel Mode: Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 140 ns
Forward Transconductance - Min: 1 S
Height: 9.15 mm
Length: 10.4 mm
Product Type: MOSFET
Rise Time: 150 ns
Series: BUZ80A
Factory Pack Quantity: 50
Subcategory: MOSFETs
BUZ80AFI
585,200 ریال
High voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology.