ترانزیستور NE32584 یک ترانزیستور HJFET فوق کم نویز تا 18 گیگاهرتز با عدد نویز فوق العاده کم 0.45dB و گین 12.5dB
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET The NE32584C is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons.
The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications.
FEATURES
• VERY LOW NOISE FIGURE: 0.45 dB Typical at 12 GHz
• HIGH ASSOCIATED GAIN: 12.5 dB Typical at 12 GHz
•LG ≤ 0.20 µm, WG = 200 µm
• LOW COST METAL CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE