• Enhancement-Mode MOSFET Transistors

(IDD 0 @ VDD=12.5V, VGG=0V)

• Pout>7W @ VDD=12.5V, VGG=3.5V, Pin=20mW

• T>40% @ Pout=7W (VGG control), VDD=12.5V, Pin=20mW

• Broadband Frequency Range: 400-470MHz

• Module Size: 30 x 10 x 5.4 mm

DESCRIPTION:
The RA07H4047M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (V=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB.
The output power and drain current increase as the gate voltage increases.
With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum).
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

• Linear operation is possible by setting the quiescent drain current with

the gate voltage and controlling the output power with the input power

RoHS