Product Category: JFET 
RoHS: N 
Technology: Si 
Mounting Style: Through Hole 
Package / Case: TO-92-3 
Transistor Polarity: P-Channel 
Vgs - Gate-Source Breakdown Voltage: 4 V 
Id - Continuous Drain Current: 10 mA 
Pd - Power Dissipation: 310 mW 
Minimum Operating Temperature: - 65 C 
Maximum Operating Temperature: + 150 C 
Series: 2N5460
Packaging: Bulk 
Brand: Central Semiconductor 
Maximum Drain Gate Voltage: 40 V