Features
Double-data-rate architecture, two data transfers per clock cycle
Bi-directional data strobe (DQS)
Differential clock inputs (CLK and CLK)
DLL aligns DQ and DQS transition with CLK transition
Four bank operation
CAS Latency : 2.5, 3, 4
Burst Type : Sequential and Interleave
Burst Length : 2, 4, 8
All inputs except data & DM are sampled at the rising edge of the system clock (CLK)
Data I/O transitions on both edges of data strobe (DQS)
DQS is edge-aligned with data for READs; center-aligned with data for WRITEs
Data mask (DM) for write masking only
VDD = 2.5V ± 0.2V, VDDQ = 2.5V ± 0.2V
15.6us refresh interval
Auto & Self refresh
2.5V I/O (SSTL_2 compatible)
M13S128168A
5,890,500 ریال
M13S128168A ; 2M x 16 Bit x 4 Banks Double Data Rate SDRAM ·