High Voltage NPN Transistor for General Purpose and Telephony Applications

ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE VCEO Collector -Emitter Voltage 160 VCBO Collector -Base Voltage 180 VEBO Emitter -Base Voltage 6.0 IC Collector Current Continuous 600 PD Power Dissipation @Ta=25°C 625 Derate Above 5.0 PD Power Dissipation @Tc=25°C 1.5 Derate Above 12 Tj Junction Temperature 150 Tstg Storage Temperature to +150 THERMAL RESISTANCE Rth(j-c) Junction to Case 125 Rth(j-a) (1) Junction to Ambient 357 (1) Rth(j-a) is measured with the device soldered into a typical printed circuit board ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION VCEO IC=1mA,IB=0 Collector -Emitter Voltage VCBO Collector -Base Voltage IC=100µA.IE=0 VEBO Emitter -Base Voltage IE=10µA, IC=-0 ICBO VCB=160V, IE=0 Collector-Cut off Current IC=10mA,IB=1mA IC=50mA,IB=5mA UNIT mA mW mw/°C W mw/°C °C °C/W