Silicon NPN Power Transistor BU105 DESCRIPTION ·High Voltage-VCER= 1300V (Min) ·

Collector-Emitter Saturation V oltage- : VCE(sat)= 5.0V(Max.)@ IC= 2.5 A ·

Minimum Lot-to-Lot variations for r obust device performance and reliable o peration APPLICATIONS ·Designed for us e in line operated B&W(19 and 20 inch 1 10℃ deflection circuits ) or color ( 11 and 14 inch 90℃ deflection circuit s TV receivers.
ABSOLUTE MAXIMUM RATIN GS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 13 00 V VCER Collector-Emitter Voltage RBE= 100Ω 1300 V VCEO Collector-Em itter Voltage 750 V VE .