Type Designator: 2SA1980-G 
   Material of Transistor: Si 
   Polarity: PNP 
   Maximum Collector Power Dissipation (Pc): 0.63 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.15 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 80 MHz
   Collector Capacitance (Cc): 4 pF
   Forward Current Transfer Ratio (hFE), MIN: 40 
   Noise Figure, dB: -
   Package: TO92